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DIM125PHM33 TS000 IGBT Half Bridge Module 250A 3300V High Power Semiconductor for Industrial Motor Drives and Renewable Energy Systems
DIM125PHM33 TS000 IGBT Half Bridge Module 250A 3300V High Power Semiconductor for Industrial Motor Drives and Renewable Energy Systems

DIM125PHM33 TS000 IGBT Half Bridge Module 250A 3300V High Power Semiconductor for Industrial Motor Drives and Renewable Energy Systems

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Description

Dynex DIM125PHM33-TS000, IGBT Half Bridge, 250Amp, 3300V Dual IGBT Module

Features

  • IGBT for High Frequency Inverter
  • Pressure Contact Technology
  • Electrically insulated base plate
  • Industrial standard package
  • Medium Switching Speed
  • 6000V Isolation
  • 73mm Base Width

Applications

  • Frequency Converter
  • Deep Cycle Applications
  • Controlled Rectifiers
  • Softstart AC motor control
  • High Frequency Inverter
  • Drives
    Specification
    Dynex Part NumberDIM125PHM33-TS000
    Vces3300V
    Transistor ConfigurationDual IGBT Module (Half Bridge)
    Ic(nom) @ 80 Deg C125 Amp
    Package SizeW:73mm L:140mm D:38mm
    V(isol)6 kV
    Vf @ 25 Deg C2.9V
    Tj(max)150°C
    Td(on) @ 25 Deg C1.18uS
    Td(off) @ 25 Deg C1.95uS
    I(ces) @ 25 Deg C5mA
    Rcc
    TerminalsM5 Screw
    Hole Centres57 x 124mm(M6)
    Gate TerminalsSpade (A 2.8 - 0.5mm)
    R th(j-c)
    R th(c-h)
    Weight750g
    Mounting Torque5 Nm (4 Nm Terminals)
    Factory Pack Qty10
    CertificationUL Listed, ROHS
    Infineon HeadquartersGermany

    Datasheet
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